Current Issue : July-September Volume : 2023 Issue Number : 3 Articles : 5 Articles
Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance. In order to enhance the reverse recovery property of the device, a Schottky barrier diode (SBD) was added to the source contact area, the top of the current spreading region, of a trench-etched double-diffused SiC MOS (TED MOS). Two types of SBD structures were optimized to improve the electrical properties using 3D simulation software, “TCAD Silvaco”. During reverse recovery simulation, the carriers of the device were withdrawn from the SBD, indicating that the new design was effective. It also showed that the recovery properties of the new design depended on temperature, carrier lifetime, and the work functions of metals. All the new designs were evaluated in various circumstances to determine the trend. Ultimately, in high-speed switching circuits, the SiC TED MOS with SBD structure efficiently boosted switching speed, while reducing switching loss....
This paper presents an implementation scheme and experimental evaluation of a highlinearity closed-loop capacitive accelerometer based on ring-diode capacitance detection. By deducing the capacitance detection model of the ring-diode considering the influence of the diode, the existing theoretical model error of the ring-diode is corrected and a closed-loop scheme of reusing the detection electrode and the control electrode of the MEMS die is designed to apply this detection scheme to the parallel-plate accelerometer, which only has three independent electrodes. After analyzing the nonlinear problems in the existing closed-loop control schemes, a theoretically absolute linear closed-loop control scheme is proposed, and an integrated closed-loop accelerometer is realized by combining the closed-loop diode detection. The experimental results of the ring-diode detection model are in agreement with the theoretical formula. The non-linearity of the accelerometer within ±1 g after the closed-loop is 130 ppm, compared with 1500 ppm when the open-loop is used....
This work studies the thallium halogenide TlBr/BrCl quantum dot (QD) semiconductor structure and specifies its optical properties. This QD structure is poorly studied. High gain is obtained, with two peaks at 800 and 3000 nm. Doping is shown to increase the gain by one order. Then, TlBr QD semiconductor optical amplifier (SOA) characteristics are studied. High dB gain is shown mainly at the doped structure, which can be used in various inline applications....
This work investigates the surface-barrier photoelectric properties of Au-palladium-n-GaP structures. Research into the visible spectrum region, under the action of both linearly polarized and natural radiation, provides us with new information about the height of the barrier, the interface m-s section, and the GaP band structure. SBs based on GaP (p- and n-type) are helpful for researchers in developing advantageous structures for creating various photovoltaic devices—photodetectors for fiber-optic control of energy systems or possible structures for solar energy. Despite many years of research, issues concerning the band structure of semiconductors based on the phenomenon of photoelectroactive absorption in such surface-barrier structures’ m-s remain urgent in the creation of new high-performance devices. Such structures may also be interesting for creating solar energy systems. They create a thin insulating dielectric layer (usually an oxide layer) in solar cells on SBs between the m and the semiconductor substrate. The advantage of solar cells based on m dielectric semiconductor structures is the strong electric field near the surface of the semiconductor that usually has a direction favoring the collection of carriers created by short-wavelength light. Diffusion of impurities usually results in crystal defects in the active region. There are no such defects in the studied elements. This is also the difference between solar cells on m dielectric structures and elements with diffusion in p-n junctions. We studied the PS of Au-Pd-n-GaP nanostructures to determine the height of the potential barrier qϕBo and obtained accurate data on the zone structure of the n-GaP. The PS of nanostructured Au-Pd-n-GaP structures was studied in the visible region of the spectrum. Essential information about the semiconductor’s potential barrier parameters and band structure was obtained. The intermediate Pd nanolayer between Au and GaP has specific effects on the Au-Pd-n-GaP nanostructure, which are of considerable practical and scientific significance for future needs....
Star sensors are widely used by satellites for their precise pointing accuracy. However, protons in space will cause cumulative effects and single-event transients in the imaging systems of star sensors. These effects will affect the success rate of star map recognition of star sensors. In this paper, proton irradiation experiments and field tests were carried out in turn, and three typical star recognition algorithms were used to recognize the star maps. The results showed that cumulative effects led to a decrease in the number of identifiable stars, which greatly affected the recognition success rate of the grid algorithm. Hot pixels caused by displacement damage effects increased the star centroid positioning error, leading to a decrease in the recognition success rate of the triangle algorithm and pyramid algorithm. Single-event transients produced by protons hitting the image sensor are similar to the grayscale value and shape of a star, and were recognized as “false stars”, which had a significant impact on the success rate of the three recognition algorithms. In general, the pyramid algorithm was more effective than the other two algorithms in identifying the affected star map, and the recognition success rate of the grid algorithm was significantly reduced....
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